Simulation Effects of Operating Temperature and Frequency at Performance of Different SRAM Cell Structures at Various Technologies
نویسندگان
چکیده
To solve the power dissipation problem, many researchers have proposed different ideas from the device level to the architectural level and above. However, there is no universal way to avoid tradeoffs between power, delay and area, and thus designers are required to choose appropriate techniques that satisfy application and product needs. This paper represents the simulation of different SRAM cells and their comparative analysis on different parameters such as Power, Operating Frequency, Temperature and area efficiency etc. All the simulations have been carried out on EDA tanner at 90nm, 45nm and 32nm technologies for enhancing the cell performance.
منابع مشابه
Simulation and Analysis of SRAM Cell Structures at 90nm Technology
SRAM is a most common embedded memory for CMOS ICs and it uses Bistable Latching circuitry to store a bit. This paper represents the simulation of different SRAM cells and their comparative analysis on different parameters such as Power Supply Voltage, Operating Frequency, Temperature and area efficiency etc. All the simulations have been carried out on BSIM 3V3 90nm technology at Tanner EDA tool.
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